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发明名称
HIGH VACUUM ION IMPLANTING METHOD
摘要
申请公布号
JPS5385173(A)
申请公布日期
1978.07.27
申请号
JP19760157931
申请日期
1976.12.31
申请人
MURAYAMA YOUICHI
发明人
MURAYAMA YOUICHI
分类号
C23C14/32;H01L21/265;H01L21/268
主分类号
C23C14/32
代理机构
代理人
主权项
地址
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