发明名称 BACK BIAS VOLTAGE GENERATOR
摘要 The generator with a level detecting circuit determining the clamping level being insensitive to the power supply comprises an oscillator (10) for generating pulse, a buffer (20) generating pulse with power supply level, a charge pump circuit (30) generating the back-bias voltage, and a back-bias voltage level detector (40) maintaining the back-bias voltage insensitive to variation of the power supply. The generator fabricated on the semiconductor chip reduces the junction breakdown and leakage current because the reverse bias voltage is lower than conventional one.
申请公布号 KR900006192(B1) 申请公布日期 1990.08.25
申请号 KR19870012041 申请日期 1987.10.30
申请人 SAMSUNG ELECTRONICS CO.LTD. 发明人 CHO SU-IM;KIM CHANG-HYUN;MIN DONG-SON
分类号 H01L27/10;G11C11/34;G11C11/40;G11C11/407;G11C11/408;(IPC1-7):G11C11/40 主分类号 H01L27/10
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