| 发明名称 |
LIQUID PHASE EPITAXIAL GROWTH METHOD |
| 摘要 |
<p>PURPOSE:To obtain a good quality crystal layer by contacting a source wafer to crystal wafer surface immediate before starting of epitaxial growth thereby performing epitaxial growth.</p> |
| 申请公布号 |
JPS5384677(A) |
申请公布日期 |
1978.07.26 |
| 申请号 |
JP19760159388 |
申请日期 |
1976.12.30 |
| 申请人 |
FUJITSU LTD |
发明人 |
NAKAJIMA KAZUO |
| 分类号 |
C30B19/00;H01L21/208;H01L33/30 |
主分类号 |
C30B19/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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