发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
<p>An improved memory for storing digital data is described incorporating two variable threshold transistors per memory cell which are written in opposite directions concomitantly by applying a polarizing voltage across the gate insulator of each transistor. Subsequent writing into the memory cell is limited by means of sensing the data stored and comparing it with the data to be written to permit only write cycles where the data stored would be opposite. The variable threshold transistors are thereby operated out of saturation by shifting the voltage thresholds back and forth in opposite directions. By utilizing two variable threshold devices per memory cell, data is sensed by the difference in the conductance of the two devices providing a wider detection window.</p> |
申请公布号 |
JPS5384433(A) |
申请公布日期 |
1978.07.25 |
申请号 |
JP19770156612 |
申请日期 |
1977.12.27 |
申请人 |
WESTINGHOUSE ELECTRIC CORP |
发明人 |
JIEIMUZU RONARUDO KURITSUCHI |
分类号 |
G11C17/00;G11C11/34;G11C16/02;G11C16/04;G11C16/34;H03K19/0185 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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