| 摘要 |
1530802 Liquid phase epitaxy WESTERN ELECTRIC CO INC 5 Sept 1975 [11 March 1975] 20209/78 Divided out of 1530801 Heading BIS [Also in Division H1] The subject matter of this specification is included in specification 1530801, but the claims relate to growing a layer of uniform thickness with a tapered edge portion on a semiconductor substrate by placing a mask close (e.g. 70Á) to part of the substrate and maintaining the substrate in contact with a saturated source solution while cooling, the taper forming at the edge of the mask. Typically the layer, of GaAs or Al x Ga 1-x As 1-y P y , is grown from a solution of its components in Ga using a 1mm. wide mask of sapphine, quartz or BN extending centrally along the base of a removal sleeve 3 in graphite boot 52 (Fig. 4A), under which saturation seed 59 and the substrate 57 are slid. The other lined walls contain different solutions, the sleeve 2 having a central partition extending down nearly to the substrate to locally increase the growth rate. The grown structure is cleared to form the laser configuration of Fig. 1, in which taper 16.1 guides light produced in active region 16 into the light guiding layer 14 grown from the material in sleeve 2. |
