发明名称 REVERSE CONDUCTING THYRISTOR
摘要 PURPOSE:To dope Au in an N type base layer and improve overvoltage rating based on the fact that with a semiconductor whose resistivity is increased by dooing Au, its dielectric strength becomes high in transitional period of several mus and steadily returns to the dielectric strength by the specific resistance before doping.
申请公布号 JPS5383481(A) 申请公布日期 1978.07.22
申请号 JP19760159961 申请日期 1976.12.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 GAMOU HIROSHI;KAWAKAMI AKIRA;NAKAGAWA TSUTOMU
分类号 H01L29/74 主分类号 H01L29/74
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