Method of preparation of SOS extrinsic infrared detector and read-out device

摘要

A silicon-on-sapphire, or silicon-on-spinel (SOS), epitaxial detector and readout structure and method of preparation. The present structure comprises silicon devices formed on sapphire, or spinel, substrates in which delineated silicon detectors, and electrically and optically isolated charge-coupled devices (CCDs), are used for signal readout from the detectors. The structure may be placed at the focal plane of an imaging infrared (IR) system for signal readout therefrom.