VERBUNDBAUELEMENT MIT EINER EPITAXIAL AUFGEWACHSENEN SILIZIUM-INSEL

摘要

A method is provided for the manufacture of a semi-planar silicon-on-sapphire composite comprising a sapphire substrate, an epitaxial monocrystalline silicon mesa formed adjacent the substrate and an epitaxial deposition of monocrystalline aluminum oxide surrounding the mesa. An essential step in the method is deposition of the aluminum oxide simultaneously adjacent the sapphire substrate and the monocrystalline silicon mesa whereby aluminum oxide formed adjacent the silicon mesa is polycrystalline and aluminum oxide deposited adjacent the sapphire substrate is monocrystalline. This enables the selective removal of the polycrystalline aluminum oxide adjacent the surface of the monocrystalline silicon mesa, thereby forming the composite.