发明名称 Class B FET amplifier circuit
摘要 A complementary inverter amplifier circuit comprising a complementary inverter including a p-channel MIS FET connected to a first source potential, an n-channel MIS FET connected to a second source potential, the gate of the two FETs being applied with a common linear input, respective load resistors connected to the drains of the complementary FETs, an output being derived from the interconnection point of the load resistors or from the drains of the FETs, and a bias resistor connected between the gate and the drain of each of the complementary FETs, the input being supplied to the gates of the FETs through respective capacitors. The p-channel FET and n-channel FET are individually biased so that the circuit may serve as a class B push pull amplifier of low power consumption.
申请公布号 US4100502(A) 申请公布日期 1978.07.11
申请号 US19760719238 申请日期 1976.08.31
申请人 HITACHI, LTD. 发明人 YAMASHIRO, OSAMU
分类号 G04F5/06;H01L21/822;H01L27/04;H03B5/36;H03F3/20;H03F3/213;H03F3/30;H03F3/34;H03F3/345;H03F3/347;H03K19/0948;(IPC1-7):H03F3/16 主分类号 G04F5/06
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