发明名称 Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support
摘要 <p>A layer of emitting material is applied to a retaining substrate in a process, in which the material of the emitting source is converted into a gas and then deposited onto the substrate. The emitting material from >=1 source is applied to an intermediate element from which it is deposited onto the emitter retaining substrate. Pref. the transfer to and from the intermediate element is carried out by sublimation. This transfer may be carried out by a chemical gas transport reaction in presence of a carrier gas as a reagent. The two processes may be combined so that the application to the intermediate element is carried out by sublimation, while gas transport reaction is used for application from this element to the substrate.</p>
申请公布号 NL7700148(A) 申请公布日期 1978.07.11
申请号 NL19770000148 申请日期 1977.01.07
申请人 GOSUDARSTVENNY NAUCHNO-ISSLEDOVATELSKY I PROEKTNY INSTITUT REDKOMETALLICHESKOI PROMYSHLENNOSTI "GIREDMET" TE MOSKOU. 发明人
分类号 C23C14/24;C23C16/00;H01L21/203;H01L21/363;(IPC1-7):01J17/28;03C17/00;04B41/06;23C11/00;04B41/32 主分类号 C23C14/24
代理机构 代理人
主权项
地址