| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain the device including the high-speed and highly-integrated inverter by using short-channel MOSFET whose threshold voltage will not decrease for driving and short-channel depletion-type FET for load. |
| 申请公布号 |
JPS5378176(A) |
申请公布日期 |
1978.07.11 |
| 申请号 |
JP19760153353 |
申请日期 |
1976.12.22 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
NATORI KENJI;MASUOKA FUJIO |
| 分类号 |
H01L21/8236;H01L27/088;H01L29/78 |
主分类号 |
H01L21/8236 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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