发明名称 Method of making etched-striped substrate planar laser
摘要 A method of making a diode laser in which a pump current confining channel is formed on the substrate side of a diode laser prior to growth of the active or recombination region of the diode laser. The current confining channel is formed by providing, by diffusion, a rectifying junction on a substrate surface and then forming, by etching, a narrow channel completely through a central portion of the diffused layer and the rectifying junction. The remaining layers of the diode laser are then successively grown. The portions of the rectifying junction on both sides of the channel are reverse biased when the primary junction of the diode laser is forward biased whereby pump current flow is confined to a path through the channel.
申请公布号 US4099999(A) 申请公布日期 1978.07.11
申请号 US19770805661 申请日期 1977.06.13
申请人 XEROX CORPORATION 发明人 BURNHAM, ROBERT D.;SCIFRES, DONALD R.
分类号 H01S5/00;H01L29/06;H01S5/223;(IPC1-7):H01L21/20;H01L21/74;H01S3/06 主分类号 H01S5/00
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