发明名称 |
Fabricating integrated circuits incorporating high-performance bipolar transistors |
摘要 |
A method and resulting semiconductor device which utilizes a mesa emitter structure in a silicon body. The mesa emitter is formed in the silicon semiconductor body and then passivated on its sidewalls using a suitable dielectric. The base region is formed both under the mesa emitter and adjacent thereto. The emitter-base junction is substantially in one plane and substantially without a sidewall component. Contacts are provided to the emitter and to the base region surrounding the mesa emitter. The resulting structure is such that a base contact can be within a few thousand angstroms of the intrinsic base region.
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申请公布号 |
US4099987(A) |
申请公布日期 |
1978.07.11 |
申请号 |
US19770818640 |
申请日期 |
1977.07.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JAMBOTKAR, CHAKRAPANI GAJANAN |
分类号 |
H01L23/485;H01L29/08;H01L29/732;(IPC1-7):H01L21/26;H01L7/54 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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