| 摘要 |
A no-delay, ratioless AND gate compatible with a four-phase, major-minor clocking scheme and a six-phase metal oxide semiconductor (MOS) system. The disclosed AND gate can be implemented by the interconnection of first and second field effect transistors having conduction paths thereof selectively connected between a respective input terminal and the output terminal of the AND gate to precharge and conditionally discharge the output terminal.
|
