| 摘要 |
In a method of producing semiconductor bodies by dividing up a large-area semiconductor starting wafer (1) containing at least one p-n junction (S1) and having a contact metal coating (12,14; 22,23,24) on each side of the starting wafer, in order to utilise the area of the starting wafer as well as possible and to ensure a uniform edge chamfering of the semiconductor body trench-like depressions (5) are provided on one side of the starting wafer, which are closed upon themselves and are determined in each case by the shape of the semiconductor body and which extend through the p-n junction of the starting wafer and expose the junctions. The depressions (5), which form a pattern, are filled with an insulating and stabilising substance (7) at least in the region of the emergence of the p-n junction (S1) at the surface. For the further processing of the semiconductor bodies envisaged, the starting wafer is provided with at least one metallic coating (12,14; 22,23,24) in each case on both sides in accordance with the predetermined area segments and then the starting wafer is separated, starting from the side not provided with depressions, in accordance with the existing pattern between adjacent depressions. <IMAGE> |
