发明名称 |
PRODUCTION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PURPOSE:To obtain IC which has a transistor group having the high and low threshold voltages on the same semiconductor substrate by providing a mask pattern which determines gate arrangement when a desired ROM code is obtained instead of selecting an impurity area at a channel stopper forming time. |
申请公布号 |
JPS5377480(A) |
申请公布日期 |
1978.07.08 |
申请号 |
JP19760154604 |
申请日期 |
1976.12.21 |
申请人 |
NIPPON ELECTRIC CO |
发明人 |
YOSHINO TATSUO;YAMAMURA TOORU |
分类号 |
G11C17/00;G11C17/08;H01L21/8246;H01L27/112;H01L29/78 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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