发明名称 PRODUCTION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To obtain IC which has a transistor group having the high and low threshold voltages on the same semiconductor substrate by providing a mask pattern which determines gate arrangement when a desired ROM code is obtained instead of selecting an impurity area at a channel stopper forming time.
申请公布号 JPS5377480(A) 申请公布日期 1978.07.08
申请号 JP19760154604 申请日期 1976.12.21
申请人 NIPPON ELECTRIC CO 发明人 YOSHINO TATSUO;YAMAMURA TOORU
分类号 G11C17/00;G11C17/08;H01L21/8246;H01L27/112;H01L29/78 主分类号 G11C17/00
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