| 摘要 |
<p>A multilayer power transistor includes an emitter zone having two layers of different doping levels, a less highly doped layer and a more highly doped surface region. The base zone of the transistor includes a central base region of higher doping level than that of the remainder of the base zone and which extends into the emitter surface region. This configuration results in a structure which exhibits a defocalization effect at any current level and improved secondary breakdown characteristics.</p> |
