发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To suppress the current flowing in diodes by providing a gate protecting circuit including the thin-film resistor formed on a substrate, the diodes of the P channel region formed in the substrate and the diode of an N channel region.
申请公布号 JPS5376679(A) 申请公布日期 1978.07.07
申请号 JP19760152428 申请日期 1976.12.17
申请人 NIPPON ELECTRIC CO 发明人 YAMAGUCHI YASUTAKA
分类号 H03F1/52;H01L27/02;H01L27/08;H01L29/78;H03F1/42 主分类号 H03F1/52
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