发明名称 AMPLIFIER WITH FET HAVING GATE LEAKAGE CURRENT LIMITATION
摘要 <p>An amplifier having at least a drive stage and an output stage, the output stage comprised of an FET for applying an amplified signal to a load. The drive stage includes a transistor device whose output is direct coupled to the gate electrode of the FET, the transistor device being supplied with an input signal to be amplified. A constant current source is coupled to the output of the transistor device, and thus to the gate electrode of the FET, and provides a current of predetermined magnitude to thus limit the gate leakage current during periods that the FET is cut off.</p>
申请公布号 CA1034216(A) 申请公布日期 1978.07.04
申请号 CA19750238576 申请日期 1975.10.29
申请人 SONY CORPORATION 发明人 MIYATA, TOSHIHIKO
分类号 H03F3/20;H03F3/30 主分类号 H03F3/20
代理机构 代理人
主权项
地址