| 摘要 |
1,244,013. Semi-conductor devices; printed circuits; capacitors. GENERAL ELECTRIC CO. 27 Sept., 1968 [13 Oct., 1967], No. 46117/68. Headings H1K, H1M and H1R. The Specification relates to metal layers on passivated semi-conductor surfaces. A metal layer is formed over a layer of passivating insulation and is then enclosed by a second layer of insulation through which extends a means for making contact to the metal layer. The metal and the insulators are so chosen that the structure may if necessary be processed at, for example, normal inpurity diffusion temperatures without their mutual reaction. The metal may be tungsten or molybdenum, and the insulator may be silicon dioxide, silicon nitride, or silicon oxynitride. The semi-conductor substrate may be of silicon, germanium, or gallium arsenide. The buried metal film maybe the gate electrode of an IGFET or a cross-under connector for circuitry on the upper surface of the second insulating layer, or two superposed buried metal films separated by insulation may be provided to form a capacitor or transmission line. Processing details are given. Contact to the buried metal film is provided by deposited aluminium. |
