发明名称 |
PERFECCIONAMIENTOS EN DISPOSITIVOS SEMICONDUCTORES. |
摘要 |
<p>A semiconductor junction-isolated PNPN crosspoint switch array has a plurality of crosspoint switches that are each formed of four regions of alternating conductivity type in a semiconductor substrate. Low enough leakage to allow the crosspoint switch array to be used in large telephone switching systems is achieved by proper selection of the thickness of the semiconductor regions and by appropriate gold doping thereof.</p> |
申请公布号 |
ES464707(A1) |
申请公布日期 |
1978.07.01 |
申请号 |
ES19070004647 |
申请日期 |
1977.12.02 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
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分类号 |
H01L27/06;H01L21/761;H01L21/822;H01L27/102;H01L29/167;H01L29/74;H02M1/08;H03K17/735;(IPC1-7):01L/ |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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