发明名称 |
MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To enhance the high frequency property by securing a high resistance value at the surface layer and a low resistance value on the internal surface respectively with injection of the impurity ion into a compound semiconductor layer featuring a high resistance value and then by forming a sudden impurity concentration slope between the high and low resistance value. |
申请公布号 |
JPS5374383(A) |
申请公布日期 |
1978.07.01 |
申请号 |
JP19760151128 |
申请日期 |
1976.12.15 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
UMEBACHI SHIYOUTAROU;NAGASHIMA ATSUSHI;KANOU KOUTA |
分类号 |
H01L29/872;H01L29/47 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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