| 发明名称 |
PROCEDE DE FABRICATION DE SEMICONDUCTEURS DE PUISSANCE A CONTACTS PRESSES |
| 摘要 |
<p>The invention relates to a method of manufacturing power semiconductors with pressed contacts and with an interdigitated structure. The thickest contact metal coverings are formed by application of a metal layer by serigraphy on a first thin metal layer deposited by evaporation in a vacuum.</p> |
| 申请公布号 |
BE862496(A1) |
申请公布日期 |
1978.06.30 |
| 申请号 |
BE19771008619 |
申请日期 |
1977.12.30 |
| 申请人 |
ALSTHOM-ATLANTIQUE |
发明人 |
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| 分类号 |
H01L21/285;H01L23/051;H01L23/48;H01L29/417;H01L29/423;(IPC1-7):01L/ |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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