| 摘要 |
<p>1,112,002. Optoelectronic device. TEXAS INSTRUMENTS Inc. 8 June, 1965 [29 June, 1964], No. 24233/65. Heading H1K. In an optoelectronic device comprising a radiation-sensitive diode and a radiation emitting device optically linked thereto, electrostatic shielding means are provided as integral part of the diode. A light emitting diode 12 of GaAs having electrodes 34 and 36 and an oxide film 32 thereon, sends light through transparent medium 46 to the radiation-sensitive diode 16. The Si diode 16 has Al electrodes 70 and 73, the former making connection to P-region 64 whilst the other is connected to N-region 62 via an N+ channel 66, the channel 66 being the only connection to N-region 62 which is otherwise surrounded by P-type material. Such an arrangement is said to shield the detector electrostatically from the radiation source and thus eliminate any distributive capacitance between the signal ground of the light source and the signal portion of the detector. Two equivalent circuit diagrams are given to illustrate device with and without shielding (Figs. 3 and 6, not shown). Another sectional view of the device together with a plan, an isometric view and Figures illustrating the manufacture of the detector by conventional masking, etching and diffusion techniques are given.</p> |
