发明名称 |
SILICON THYRISTORS SENSITIVE TO LOW TEMPERATURE |
摘要 |
Thermally sensitive silicon thyristors capable of intrinsically switching between high and low resistance states in response to a predetermined temperature in the range -30 DEG C to +150 DEG C; this intrinsic switching temperature being not only lower than heretofore achieved but also predictably determinable. The two terminal breakover voltage is nominally equal to one-half Vmax at a temperature less than 50 DEG C, where Vmax is the maximum value of the two terminal breakover voltage of the thyristor with respect to temperature. |
申请公布号 |
AU2091376(A) |
申请公布日期 |
1978.06.29 |
申请号 |
AU19760020913 |
申请日期 |
1976.12.24 |
申请人 |
CUTLER-HAMMER WORLD TRADE, INC. |
发明人 |
STANLEY V. JASKOLSKI;ROBERT W. LADE;HERMAN P. SCHUTTEN;GORDON B. SPELLMAN |
分类号 |
H01L29/74;G01K7/01;H01L29/66 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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