| 摘要 |
1515971 Crystal growth INTERNATIONAL BUSINESS MACHINES CORP 24 March 1976 [27 May 1975] 11807/76 Heading BIS A process for controlling the oxygen content of silicon crystals which are drawn from a silicon melt contained in a vessel having an interior surface of silica, comprises prior to introducing the silicon charge into the vessel treating at least a portion of the silica surface of the vessel which is to be in contact with the melt, by heat treatment or by roughening, in such manner as to provide an oxygen concentration in the melt during the crystal growing process which is greater than, and an oxygen concentration gradient along the length of the drawn crystal which is less than that which would occur without such treatment. |
