| 发明名称 |
Combination glass/low temperature deposited Si{hd w{b N{HD x{b H{HD y{b O{HD z {b passivating overcoat with improved crack and corrosion resistance for a semiconductor device |
| 摘要 |
A semiconductor device including a body of semiconductor material with a metallic conductor disposed thereon has a combination glass/low-temperature-(typically 300 DEG C) deposited SiwNxHyOz passivating overcoat with improved crack and corrosion resistance. This nitride is formed over the conductor, with the glass over the nitride.
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| 申请公布号 |
US4097889(A) |
申请公布日期 |
1978.06.27 |
| 申请号 |
US19760737850 |
申请日期 |
1976.11.01 |
| 申请人 |
RCA CORPORATION |
发明人 |
KERN, WERNER;TRACY, CHESTER EDWIN |
| 分类号 |
H01L21/314;H01L21/318;H01L23/29;H01L23/31;H01L23/485;H01L23/532;(IPC1-7):H01L29/34 |
主分类号 |
H01L21/314 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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