| 发明名称 |
Thyristor and method of producing the same |
| 摘要 |
A thyristor having current-amplifying auxiliary structures with an auxiliary emitter electrode out of contact with the contact electrode. The auxiliary emitter electrode is formed thinner than the main emitter electrode. The contact electrode is formed by simple planar techniques to have a plane surface on top of the semiconductor body.
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| 申请公布号 |
US4096623(A) |
申请公布日期 |
1978.06.27 |
| 申请号 |
US19770760272 |
申请日期 |
1977.01.18 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
PORST, ALFRED;SCHUH, GOTTFRIED |
| 分类号 |
H01L21/00;H01L29/00;H01L29/417;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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