发明名称 |
Method of producing silicon useful for semiconductor component manufacture |
摘要 |
Technical-grade silicon is purified to produce silicon having less than 1 ppm of electrically effective impurities therein, particularly boron and phosphorus, by treating molten technical silicon with a hydrogen containing gas in the presence of water so as to remove such impurities from the molten silicon.
|
申请公布号 |
US4097584(A) |
申请公布日期 |
1978.06.27 |
申请号 |
US19770798442 |
申请日期 |
1977.05.19 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
REUSCHEL, KONRAD;SCHINK, NORBERT |
分类号 |
C01B33/02;C01B33/037;(IPC1-7):C01B33/02;C01B35/08;C01B35/10;C01B25/06 |
主分类号 |
C01B33/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|