发明名称 Method of producing silicon useful for semiconductor component manufacture
摘要 Technical-grade silicon is purified to produce silicon having less than 1 ppm of electrically effective impurities therein, particularly boron and phosphorus, by treating molten technical silicon with a hydrogen containing gas in the presence of water so as to remove such impurities from the molten silicon.
申请公布号 US4097584(A) 申请公布日期 1978.06.27
申请号 US19770798442 申请日期 1977.05.19
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 REUSCHEL, KONRAD;SCHINK, NORBERT
分类号 C01B33/02;C01B33/037;(IPC1-7):C01B33/02;C01B35/08;C01B35/10;C01B25/06 主分类号 C01B33/02
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