Ion implanted Schottky barrier diode

摘要

A Schottky barrier diode having a subsurface metalsemiconductor rectifying barrier with electrical rectification properties immune to semiconductor surface contamination. A special ion implantation technique is used to produce a very thin but strongly metallic island-like region in a semiconductive body. A Schottky barrier separates the region from the semiconductive body below the semiconductor body surface. A special truncated Gaussian profile in metal concentration through the thickness of the region provides low thermal and electrical resistance between the Schottky barrier and the region surface.