发明名称 |
Fabrication of an epitaxial layer diode in aluminum nitride on sapphire |
摘要 |
An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate.
|
申请公布号 |
US4095331(A) |
申请公布日期 |
1978.06.20 |
申请号 |
US19760738916 |
申请日期 |
1976.11.04 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
RUTZ, RICHARD FREDERICK |
分类号 |
H01L21/203;H01L33/32;(IPC1-7):B01J17/00;H01L21/20 |
主分类号 |
H01L21/203 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|