Ionising radiation and photon detector prodn. - by applying metal and/or metal-insulator contacts to separate areas on semiconductor surface

摘要

Prodn. of detectors for ionising radiation and/or photons involves applying a metal contact, pref. of Al, to 2 separate, pref. opposite surface areas of a semiconductor, so that there is a thin insulation layer (MIS contact) between at least one of the metal contacts and the corresp. surface area. Pref. a semiconductor crystal is used with pronounced n- or p-doping and it is pref. to apply one metal and one MIS contact. The detector pref. consists of Si semiconductor with a SiO2 insulating layer produced by thermal oxidn. and Al electrodes deposited from the vapour phase. The insulating layer cna be produced by applying lacquers, plastics, films, Si3N4, SiO2, Al2O3, Be2O3 (sic) or by ion bombardment. The detectors are used esp. for the detection and/or determn. of the absolute flux of neutrons. They can be made esp. economically and in high yields.