发明名称 Metals deposited by cathodic sputtering - in appts. using magnetic field to increase sputtering rate
摘要 <p>Cathodic sputtering appts, in which a metal coating is applied to a substrate near the anode using an extremely low gas pressure. The anode and cathode are coaxial; and the cathode contains a magnet so the direction of the magnetic field crosses the electric field at 90 degrees; and the magnetic lines of force surround the electrons emitted by the cathode, the lines starting from, and returning to, the cathode. In one pref. design, the cathode is a water-cooled, hollow cylinder contg. a magnet; and several anode rods form a circular row round the cathode. The workpiece, or a circular row of workpieces, are located on the outside of the anode rods in the vacuum chamber. A gas pressure of 1-2 x 10-2 torr is normally required for sputtering. The invention requires a gas pressure of only 2-3 x 10-4 torr, for fast deposition of uniform coating while keeping the substrates at a low temp.</p>
申请公布号 DE2655942(A1) 申请公布日期 1978.06.15
申请号 DE19762655942 申请日期 1976.12.10
申请人 K.K. TOKUDA SEISAKUSHO 发明人 KURIYAMA,NOBORU
分类号 H01J37/34;(IPC1-7):23C15/00 主分类号 H01J37/34
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