发明名称 THIN-FILM THERMOELECTRIC ELEMENT
摘要 PURPOSE:To form a compact device by laminating a plane-shaped magnet and a thin-film semiconductor alternately. CONSTITUTION:The Bi888888Sb121212 5 is directly adhered to a magnet 4 which is covered by an electrical insulation layer by orienting a crystal growth surface predominantly so that a bisectrix axis of a rhombohedron-shaped crystal lattice may be vertical to a substrate surface and then it is laminated. In this case, the upper surface of the plane-shaped magnet 4 is set to the north pole, while the lower surface is set to the south pole. Then, an electrode 6 is adhered to both edge surfaces of the laminated element with a conductive paste 7. Then, a cooling plate 8 is adhered to both non-adhered edge surfaces of the electrode 6 by an adhesive 9 with improved heat conductivity, thus fixing the entire element. Thus, it is possible to make the device compact. Also, by giving temperature difference to both edge surfaces of the semiconductor, distance can be secured between a low-temperature part and a high-temperature part, thereby making the temperature difference valid.
申请公布号 JPH02238681(A) 申请公布日期 1990.09.20
申请号 JP19890059915 申请日期 1989.03.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAGIRI YASUSHI;TANAKA HIROYOSHI;YAMAMOTO YOSHIAKI;NISHIWAKI FUMITOSHI
分类号 H01L37/00 主分类号 H01L37/00
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