| 摘要 |
1514180 Integrated circuits WESTERN ELECTRIC CO Inc 22 Dec 1975 [27 Dec 1974] 52489/75 Heading H1K An IC comprises a semiconductor body 31 of a first conductivity type containing doped zones 201-204, 211-214, 221-224 of the opposite conductivity type which form resistors oriented in a <100> crystallographic direction, in order to minimise the piezoresistive effect of stress on the resistors, the resistors being formed by doping with both N and P type impurities such that the ratio of the concentrations is between 0À1 and 0À99 and the sum of their concentrations is at least 10<18> cm<-3>. In order to facilitate cleavage of the wafer into individual chips the IC chips may have boundaries 21, 22 in the <110> directions, and a major surface of the semiconductor body may be in the (110) or (100) planes. The resistors may be formed by doping through a mask 30 having slots parallel to the <100> directions. The resistors may be formed as lateral or vertical structures in Ge or Si wafers.
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