发明名称 POWER TRANSISTOR
摘要 PURPOSE:To improve the yield rate reduction due to local short circuit of the emitter electrode and the base electrode, by providing conducting material b blown with a current more than the specified current between the emitter layers of a plurality independently provided on the base layer and the total electrode connected to them.
申请公布号 JPS5366380(A) 申请公布日期 1978.06.13
申请号 JP19760142704 申请日期 1976.11.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 WATARI YOSHIHIKO
分类号 H01L29/41;H01L21/331;H01L29/73 主分类号 H01L29/41
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