Field effect transistor lost film fabrication process

摘要

This describes a process for fabricating transistor memory cell arrays which includes forming a thin oxide which is continuous over the entire area and which is continuously protected from the time it is deposited so that subsequent processing steps will not cause any change in the thickness of the thin oxide except where deliberately desired. By first depositing a protective masking film and subsequently removing this film in a series of steps, so that this film is lost in the fabrication process, the need for using the dual dielectric insulating layers required in the prior art can be eliminated. By eliminating such dual dielectric insulating layers the performance and density of the arrays can be improved.