发明名称 |
INSULATOR GATE TYPE MEMORY NONNVOLATILE TRANSISTOR |
摘要 |
PURPOSE:To enhance both the memory performance and the reliability by forming, through nitriding of Si single crystal substrate, the first insulator layer which is free from pinholes and features a thickness thin enough to give a tunneling to the electron. |
申请公布号 |
JPS5365674(A) |
申请公布日期 |
1978.06.12 |
申请号 |
JP19760141038 |
申请日期 |
1976.11.24 |
申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
WATANABE YOSHIO |
分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|