| 摘要 |
PURPOSE: To provide a semiconductor impedance device, which imparts high resistance and has a very small occupying area. CONSTITUTION: A semiconductor impedance device is provided in a single body 20 of polycrystalline semiconductor material formed on an insulating layer 38 attached on a substrate 30. The specified region of the single body 20 is doped by extrinsic impurities and forms a second conducting path 24. In the meantime, the substantially intrinsic region forms a first conducting path 22. A boundary 28 between the first conducting path and the second conducting path forms an intrinsic - extrinsic junction. Therefore, the impedance characteristic is obtained with the intrinsic - extrinsic junction. Thus, the occupying area is very small, and the negative temperature coefficient is provided. Therefore, the temperature-compensating effect can be provided. Since the device is substantially intrinsic, manufacturing is easy, and the yield is improved. |
