Partial gas pressure measurement - uses semiconductor probe which changes electrical characteristics with gas adsorption

摘要

A measuring probe comprising a semiconductor which changes its electronic characteristics with gas adsorption and a diffusion membrane to measure gas partial pressure of oxygen at temps. 100 degreesC. The semiconductor thin film consists mainly of a poly-crystalline metal oxide that can be measured with alternating or direct current. The main membrane component is made from Ti or Zr oxide or fluoride and includes Ag, Nb, Pt or Pd. Variations of the probe are included with thermostatically controlled heating and light transparent membranes and suitable to measure gas pressure and gas reversible absorption characteristics.