| 摘要 |
PURPOSE:To suppress a reflection from a substratum film during an exposure operation and to enhance an accuracy of a pattern by a method wherein a photoresist film is formed, via a titanium nitride film containing oxygen and having a specific thickness, on a wiring material formed on a semiconductor substrate and an exposure treatment is executed. CONSTITUTION:A titanium nitride film 11 containing oxygen is formed to be a film thickness of 20 to 30nm on wiring material layers 4, 5 formed on a semiconductor substrate 1; the titanium nitride film 11 containing the oxygen is coated with a photoresist film 6. Then, an exposure operation is executed by using a light source having a wavelength of 436nm and a developing operation is executed; the photoresist film 6 is patterned; the wiring material layers 4, 5 are etched by making use of the patterned resist film 6 as a mask. Since the titanium nitride film containing the oxygen and having a thickness of 20 to 30nm is formed under the photoresist film 6 in this manner, a reflection factor, from a substratum film, of light is lowered during the exposure operation by the light with an exposure wavelength of 436nm. Thereby, a resist pattern of high accuracy is obtained and a wiring pattern whose pattern accuracy is good can be formed. |
