| 发明名称 |
COMPLEMENTARY TYPE MOS SEMICONDUCTOR |
| 摘要 |
PURPOSE:To obtain channels of submicrons for both P and N channels and increase speed by forming gates in the V-groove formed in semiconductor substrate and reduce element area by employing vertical type structure. |
| 申请公布号 |
JPS5362988(A) |
申请公布日期 |
1978.06.05 |
| 申请号 |
JP19760138951 |
申请日期 |
1976.11.17 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
INOUE MICHIHIRO |
| 分类号 |
H01L21/8238;H01L27/04;H01L27/092;H01L29/78 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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