发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PURPOSE:To bypass surge current and provide surge protection by forming a pn junction diode in an isolated island. |
申请公布号 |
JPS5361982(A) |
申请公布日期 |
1978.06.02 |
申请号 |
JP19760137664 |
申请日期 |
1976.11.15 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
SHIRATO TAKAHIKO |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/06 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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