发明名称 VERFAHREN ZUR HERSTELLUNG EINER ELEKTRISCHEN DUENNSCHICHTSCHALTUNG
摘要 <p>An integrated circuit is manufactured by the thin film technique and consists of capacitors, printed wiring and resistors. The circuit elements are deposited on an insulating substrate and they are covered by a layer of tantalum aluminium alloy, where the proportion of tantalum lies between thirty and seventy atom percent. This is then followed by a further tantalum aluminium layer with the tantalum proportion between two and twenty atom percent. This layer is then masked and the passive elements applied by anodic oxidation. The masking and etching process is applied outside the two tantalum-aluminium layers (2, 3). The exposed tantalum aluminium layers are then completely oxidised and coated with silicon diode layer. This layer is then further masked and etched.</p>
申请公布号 DE2653814(A1) 申请公布日期 1978.06.01
申请号 DE19762653814 申请日期 1976.11.26
申请人 SIEMENS AG 发明人 MUENZ,WOLF-DIETER,DR.;BOCK,SIEGFRIED;WERNER,DIPL.-PHYS. POETZLBERGER,HANS
分类号 H01L21/70;(IPC1-7):H01L49/02 主分类号 H01L21/70
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