| 发明名称 |
JUNCTION TYPE FIELD EFFECT TRANSISTOR |
| 摘要 |
PURPOSE:Stable characteristics are shown and reliability is improved by using polysilicon including a diffusion impurity in forming upper gates and isolation junctions and using this directly as electrodes.
|
| 申请公布号 |
JPS5358779(A) |
申请公布日期 |
1978.05.26 |
| 申请号 |
JP19760133724 |
申请日期 |
1976.11.09 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
TOMIZAWA YUTAKA;MITANI TATSUROU |
| 分类号 |
H01L29/80;H01L21/337;H01L21/761;H01L29/45;H01L29/808 |
主分类号 |
H01L29/80 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
