| 摘要 |
PURPOSE:To avoid electric interference between wirings in the same wiring layers by forming a conductor film so that it deeply intrudes between the wirings, and fixing the potential of the film at a specified potential. CONSTITUTION:Wirings 3A and 3B are aligned and formed at a specified interval on an insulating film 2 on a semiconductor substrate 1. An insulating film 4 is formed so as to cover the wirings 3A and 3B and so that the film 4 intrudes between the wirings 3A and 3B. A conductor film 5 is formed on the insulating film 4 so that the film 5 intrudes between the wirings 3A and 3B so as to shield the wirings. Therefore, even if the wirings of the same layers of the wirings 3A and 3B in a dense pattern, are formed the wirings in the layers are not capacitive coupled. When a signal is inputted into one of the neighboring wirings, the signal does not affect the other wiring. Thus, the semiconductor device can be miniaturized, and the large scale integration can be achieved. |
