Quasi static, virtually nonvolatile random access memory cell

摘要

A nonvolatile Charge Injection Device (NOVCID) of Metal-Nitride-Oxide-Semiconductor (MNOS) material is operated in a novel manner in combination with a flip-flop to provide a charge pumped volatile memory storage system that can be continuously nondestructively read and on command, by applying a high positive potential to the field plate of the NOVCID, the information stored in the volatile mode is transferred to the nonvolatile state. To recover the stored information an alternating current signal is applied to the field plate.