| 发明名称 |
Silicon oxide/silicon nitride mask with improved integrity for semiconductor fabrication |
| 摘要 |
A semiconductor dielectric layer formed of silicon nitride having a uniform dispersion of carbon therein for providing reduced intrinsic tensile stresses of less than 10 x 109 dyn/cm2.
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| 申请公布号 |
US4091169(A) |
申请公布日期 |
1978.05.23 |
| 申请号 |
US19760720542 |
申请日期 |
1976.09.07 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOHG, ARMIN;EBERT, ECKEHARD;MIRBACH, ERICH |
| 分类号 |
H01L21/306;H01L21/314;H01L21/318;(IPC1-7):B32B17/06 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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