发明名称 |
Optical information storage material and method of making it |
摘要 |
An optical information storage material having a substrate and a film deposited on the substrate, the state of said material can be changed from a low optical density state to a high optical density state by the application of electrical, optical or thermal energy. The major component of the film is GeOx1, SnOx1, SbOx2, TlOx2, BiOx2 or MoOx3 wherein 0 < x1 < 2.0, 0 < x2 < 1.5 and 0 < x3 < 3.0. The film can be a mixture of above-mentioned material and an additive for improving the properties thereof. The material is made by vacuum evaporating GeO2, SnO2, Sb2O3, Tl2O3, Bi2O3 or MoO3 under deoxidization conditions.
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申请公布号 |
US4091171(A) |
申请公布日期 |
1978.05.23 |
申请号 |
US19760743214 |
申请日期 |
1976.11.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OHTA, TAKEO;TAKENAGA, MUTSUO;AKAHIRA, NOBUO;YAMADA, NOBORU;YAMASHITA, TADAOKI |
分类号 |
B41M5/26;G02F1/00;G03C1/705;G11B7/243;G11B11/00;G11C13/04;(IPC1-7):B05D1/34;G11B11/12;G11B23/00 |
主分类号 |
B41M5/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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