MANUFACTURE OF SILICON GATE MOS FIELD EFFECT TYPE SEMICONDUCTOR DEVICE,申请号JP19760130875-传众专利搜索

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发明名称	MANUFACTURE OF SILICON GATE MOS FIELD EFFECT TYPE SEMICONDUCTOR DEVICE
摘要
申请公布号	JPS5355987(A)	申请公布日期	1978.05.20
申请号	JP19760130875	申请日期	1976.10.29
申请人	NIPPON ELECTRIC CO	发明人	TAKEMAE KOUJI
分类号	H01L29/78;H01L21/225;H01L21/31	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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